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压电响应力显微术(PFM)是一种原子力显微技术,可用于表征许多材料体系功能的机电耦合特性,包括:压电体、铁电体,以及某些生物材料。通过原子力显微镜的探针针尖,对样品进行局部的电刺激,同时测量其~1-100pm / V量级的机械响应。该技术与基础材料研究和应用技术的多个领域有关。在商用PFM技术领域,Asylum Research是公认的优质品牌,因为我们的产品具备各种先进的、有专利权的测量技术和功能,可提供无串扰、高灵敏度的PFM测量。
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"Higher-eigenmode piezoresponse force microscopy: a path towards increased sensitivity and the elimination of electrostatic artifacts," G. A. MacDonald, F. W. DelRio, and J. P. Killgore, Nano Futures 2, 015005 (2018). https://doi.org/10.1088/2399-1984/aab2bc
"Domain-wall conduction in ferroelectric BiFeO3 controlled by accumulation of charged defects," T. Rojac, A. Bencan, G. Drazic, N. Sakamoto, H. Ursic, B. Jancar, G. Tavcar, M. Makarovic, J. Walker, B. Malic, and D. Damjanovic, Nat. Mater. 16, 322 (2017). https://doi.org/10.1038/nmat4799
"Nanoscale domain imaging and local piezoelectric coefficient d33 studies of single piezoelectric polymeric nanofibers," X. Liu, M. Deng, and X. Wang, Mater. Lett. 189, 66 (2017). https://doi.org/10.1016/j.matlet.2016.11.044
"Enhancing ion migration in grain boundaries of hybrid organic–inorganic perovskites by chlorine," B. Yang, C. C. Brown, J. Huang, L. Collins, X. Sang, R. R. Unocic, S. Jesse, S. V. Kalinin, A. Belianinov, J. Jakowski, D. B. Geohegan, B. G. Sumpter, K. Xiao, and O. S. Ovchinnikova, Adv. Funct. Mater. 27, 1700749 (2017). https://doi.org/10.1002/adfm.201700749
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"Room- ferroelectricity in CuInP2S6 ultrathin flakes," F. Liu, L. You, K. L. Seyler, X. Li, P. Yu, J. Lin, X. Wang, J. Zhou, H. Wang, H. He, S. T. Pantelides, W. Zhou, P. Sharma, X. Xu, P. M. Ajayan, J. Wang, and Z. Liu, Nat. Commun. 7, 12357 (2016). https://doi.org/ 10.1038/ncomms12357
"Controlling domain wall motion in ferroelectric thin films," L. J. McGilly, P. Yudin, L. Feigl, A. K. Tagantsev, and N. Setter, Nat. Nanotechnol. 10, 145 (2015). https://doi.org/10.1038/nnano.2014.320
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"Ferroelectric order in individual nanometre-scale crystals," M. J. Polking, M.-G. Han, A. Yourdkhani, V. Petkov, C. F. Kisielowski, V. V. Volkov, Y. Zhu, G. Caruntu, A. P. Alivisatos, and R. Ramesh, Nat. Mater. 11, 700 (2012). https://doi.org/10.1038/nmat3371
"Tunnel electroresistance in junctions with ultrathin ferroelectric Pb(Zr0.2Ti0.8)O3 barriers," D. Pantel, H. Lu, S. Goetze, P. Werner, D. J. Kim, A. Gruverman, D. Hesse, and M. Alexe, Appl. Phys. Lett. 100, 232902 (2012). https://doi.org/10.1063/1.4726120
"Structural and piezoelectric characteristics of BNT–BT0.05 thin films processed by sol–gel technique," M. Cernea, L. Trupina, C. Dragoi, B. S. Vasile, and R. Trusca, J. Alloys Compd. 515, 166 (2012). https://doi.org/10.1016/j.jallcom.2011.11.129
"Solid-state memories based on ferroelectric tunnel junctions," A. Chanthbouala, A. Crassous, V. Garcia, K. Bouzehouane, S. Fusil, X. Moya, J. Allibe, B. Dlubak, J. Grollier, S. Xavier, C. Deranlot, A. Moshar, R. Proksch, N. D. Mathur, M. Bibes, and A. Barthelemy, Nat. Nanotechnol. 7, 101 (2011). https://doi.org/10.1038/nnano.2011.213
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"Stretchable ferroelectric nanoribbons with wavy configurations on elastomeric substrates," X. Feng, B. D. Yang, Y. Liu, Y. Wang, C. Dagdeviren, Z. Liu, A. Carlson, J. Li, Y. Huang, and J. A. Rogers, ACS Nano 5, 3326 (2011). https://doi.org/10.1021/nn200477q
"Nanoscale switching characteristics of nearly tetragonal BiFeO3 films," D. Mazumdar, V. Shelke, M. Iliev, S. Jesse, A. Kumar, S. V. Kalinin, A. P. Baddorf, and A. Gupta, Nano Lett. 10, 2555 (2010). https://doi.org/10.1021/nl101187a
"Enhanced multiferroic properties and domain structure of La-doped BiFeO3 films," F. Yan, T. J. Zhu, M. O. Lai, and L. Lu, Scr. Mater. 63, 780 (2010). https://doi.org/10.1016/j.scriptamat.2010.06.013
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