用于半导体和微电子学研究的原子力显微镜

sMIM

• 对多种线性和非线性材料进行表征，包括：导体、和绝缘体。
• 根据材料的介电常数和导电性提供对比度
• 对掺杂剂浓度和类型进行测量，应用于微电子器件的故障分析。
• 检测碳纳米管的金属和半金属特性
• 根据在样品表面上测得的电容变化，将隐藏的结构可视化
• 以小于50 nm的分辨率，对奇异的和其他新颖的纳米结构和纳米装置进行表征

KPFM

• 确定含有陷阱电荷的样品的区域
• 监测覆盖层和厚度的均匀性
• 根据功函数探测金属的纳米结构
• 对接头和异质结构的潜在特性进行表征

EFM

• 检测隐藏在绝缘基质中的碳纳米管
• 检测聚合物混合物中的导电性夹杂物

CAFM

• 对非易失性存储器中接入器件的切换性能进行表征
• 对氧化膜的均匀性和缺陷进行表征
• 测量太阳能材料和器件的光电流
• 测量和纳米结构的电阻

电流成像

• 在一个nxn阵列上对电流-电压（I-V）进行成像，以便对扩散电阻行表征。
• 利用快速力曲线与电流成像相结合，快速进行电流的测量，以便对精巧的器件和材料进行成像
• 分析套件，可对材料和器件进行迁移率、刚度和其他关键特性的分析

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